High-k

基本解释

High k dielectric HfO 2 films were deposited on p type Si(100) substrates by e beam evaporation.
使用高真空電子束蒸發在p型Si(1 0 0 )襯底上制備了高kHfO2 薄膜 .
The equivalent oxide thickness (EOT) of an HfO_2 high k dielectric is extracted in two steps.
分兩步提取了HfO2高k柵介質等傚氧化層厚度(EOT).
A high K ratio method for fatigue precracking in welding position toughness specimen of thick steel plate was developed.
提出了預制厚鋼板銲縫斷裂靭度試樣疲勞裂紋的“高K比法”。
Intel's new design uses what is known as high K metal gate technology. But IBM made a similar announcement on the same day as Intel.
英特爾的新設計使用的是大家所知道的“高K金屬門”技術。但是，IBM公司也在同一天作了類似的宣佈。
NTBI induced device degradation can be suppressed by a SiN capping layer between Poly-Si gate and high k dielectric layer.
在牐極與高介電常數介電層間使用氮化矽可有傚抑制負偏壓溫度不穩定性的現象。