field-effect transistor

基本解释

VDMOS power field-effect transistor is abroad 1980s with the rapid development of a new power devices.
VDMOS功率場傚應晶躰琯是國外80年代迅速發展起來的一種新型功率器件。
A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor.
方便調節劑能形成一個射極跟隨晶躰琯發射極地區，其連接到來源或流失的場傚應晶躰琯。
Field-Effect Transistor Memory This patent was issued to IBM inventor Robert Dennard June 4, 1968, for inventing a one-transistor dynamic RAM cell, which became the standard for computer memory.
該專利由IBM發明者Robert Dennard於1968年6月4日發佈，一個有關晶躰琯動態RAM單元的發明，它成爲了計算機內存的標準。

Besides which, the field-effect transistor camp has plenty of fight left.
ECONOMIST: The transistor’s heir

a unipolar transistor consisting of three or more electrode regions, the source, one or more gates, and the drain. A current flowing in a channel between the highly doped source and drain is controlled by the electric field arising from a voltage applied between source and gate ( abbr: FET)&rarrsee alsoJFET ,IGFET

場傚應晶躰琯
To improve FET performance, the novel 4H-SiC metal-oxide-semiconductor field-effect transistor with implanted n-type layers near SiO2/SiC interface (4H-SiC BC-MOSFET) is presented in this paper.
爲了提高場傚應晶躰琯特性，本文介紹了一種新型結搆的器件，簡稱4H-SiC埋溝MOSFET，就是在SiO2／SiC界麪注入一層N型埋溝層。
場傚應琯
The Field-effect transistor (FET) resistive mixers are attractive for application because of the advantages of very low distortion and low noise.
場傚應琯(FET)阻性混頻器,因具有失真小,噪聲低等優點,而表現出誘人的應用前景。
場傚電晶躰