InGaAs

基本解释

Crosstalk and photoactive area of InGaAs linear detector by LBIC technique[J].
引用该论文吕衍秋;乔辉;韩冰;唐恒敬;吴小利;李雪;龚海梅.
The growth and characteristics of heavily carbon-doped p-type InGaAs lattice matched to InP by GSMBE using CBi-4 as a doping source were investigated.
以CBr_4作为碳杂质源，采用GSMBE技术生长了与InP匹配的重碳掺杂p型InGaAs材料。
The effects of the arrangement between InAs QDs and InGaAs SRL on the optical properties of QD light emitting diodes are also investigated.
制作成量子点发光二极体后，我们也观察砷化铟量子点与砷化铟镓应力缓冲层排列的顺序对光特性所产生的影响。
For this reason, alternative material systems including InGaAs, InGaAlAs, and InGaAsP with different compressive strains are explored in an attempt to obtain optimal strain level.
因此本文将研究具有不同压缩应力之砷化铟镓、砷化铝镓铟与砷磷化铟镓量子井结构，进而探讨最佳的压缩应力值。
Using the phototransmission spectrum technique, we have measured the phototransmissionspectra from In_xGa_(1-x)As/GaAs single quantum well samples. The clear modulation structureof different excitons in InGaAs well has been got.
我们采用光调制透射方法从In_xGa_(1-x)As/GaAs单量子阱样品测量了调制透射谱;得到了InGaAs量子阱中激子的清晰的调制结构.